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硅加工中的表征 英文【2025|PDF|Epub|mobi|kindle电子书版本百度云盘下载】

硅加工中的表征 英文
  • （美）布伦德尔，（美）埃文斯，（美）斯特劳瑟主编 著
  • 出版社： 哈尔滨：哈尔滨工业大学出版社
  • ISBN：9787560342801
  • 出版时间：2014
  • 标注页数：240页
  • 文件大小：34MB
  • 文件页数：257页
  • 主题词：半导体工艺－研究－英文

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图书目录

APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH1

1.1 Introduction1

1.2 Silicon Epitaxial Growth2

Basic Chemical Reactions2

Precleaning Considerations3

Reactor Types3

1.3 Film and Process Characterization4

Crystal Quality4

Preclean Quality6

Thickness9

Dopant Concentration and Dopant Profiling12

1.4 Selective Growth14

Basic Process Considerations14

Defect Density and Growth Morphology15

Preclean Quality18

Thickness18

1.5 Si1-xGex Epitaxial Growth18

Material Considerations18

Reactor Types19

1.6 Si1-xGex Material Characterization20

Composition and Thickness20

Growth Morphology22

Lattice Strain and Critical Thickness23

Relaxation Kinetics24

Bandgap Measurements24

Interfacial Abruptness and Outdiffusion25

Impurity Profiles25

1.7 Summary26

POLYSILICON CONDUCTORS32

2.1 Introduction32

2.2 Deposition33

Surface Preparation34

Nucleation and Growth35

Postgrowth Analysis38

High-Quality Polysilicon42

Integrated Circuit Fabrication Issues43

2.3 Doping45

Dopant Distribution45

Deglaze46

Ion Implantation Doping46

2.4 Patterning47

Lithography47

Etching47

2.5 Subsequent Processing48

Polycides48

Dielectric Encapsulation49

SILICIDES53

3.1 Introduction53

3.2 Formation of Silicides57

Sheet Resistance Measurements57

Rutherford Backscattering Measurements60

X-Ray Diffraction Measurements72

Ellipsometric Measurements74

3.3 The Silicide-Silicon Interface76

3.4 Oxidation of Silicides82

3.5 Dopant Redistribution During Silicide Formation84

3.6 Stress in Silicides87

3.7 Stability of Silicides90

3.8 Summary92

ALUMINUM-AND COPPER-BASED CONDUCTORS96

4.1 Introduction96

History96

4.2 Film Deposition98

Techniques98

Problems with Deposition101

4.3 Film Growth104

Substrate Surface Properties104

Surface Preparation107

Film Formation108

Microstructure110

Patterning and Etching110

4.4 Encapsulation113

4.5 Reliability Concerns114

TUNGSTEN-BASED CONDUCTORS121

5.1 Applications for ULSI Processing121

5.2 Deposition Principles122

5.3 Blanket Tungsten Deposition123

Film Thickness123

Film Conformality124

Film Resistivity124

Film Stress125

Surface Roughness126

Film Microstructure127

5.4 Selective Tungsten Deposition127

Selectivity Breakdown129

Substrate Interaction131

BARRIER FILMS138

6.1 Introduction138

6.2 Characteristics of Barrier Films139

6.3 Types of Barrier Films140

6.4 Processing Barrier Films140

Inert Sputtering141

Reactive Sputtering141

Chemical Vapor Deposition142

Nitridation and Rapid Thermal Annealing143

6.5 Examples of Barrier Films143

Titanium Thin Films144

Tungsten-TitaniumThin Films149

Titanium Nitride151

6.6 Summary163

APPENDIX: TECHNIQUE SUMMARIES169

1 Auger Electron Spectroscopy(AES)169

2 Ballistic Electron Emission Microscopy(BEEM)170

3 Capacitance-Voltage(C-V)Measurements177

4 Deep Level Transient Spectroscopy(DLTS)179

5 Dynamic Secondary Ion Mass Spectrometry(Dynamic SIMS)181

6 Electron Beam Induced Current(EBIC) Microscopy182

7 Energy-Dispersive X-Ray Spectroscopy(EDS)188

8 Focused Ion Beams(FIBs)189

9 Fourier Transform Infrared Spectroscopy(FTIR)193

10 Hall Effect Resistivity Measurements194

11 Inductively Coupled Plasma Mass Spectrometry(ICPMS)196

12 Light Microscopy197

13 Low-Energy Electron Diffraction(LEED)198

14 Neutron Activation Analysis(NAA)199

15 Optical Scatterometry200

16 Photoluminescence(PL)201

17 Raman Spectroscopy202

18 Reflection High-Energy Electron Diffraction(RHEED)203

19 Rutherford Backscattering Spectrometry(RBS)204

20 Scanning Electron Microscopy(SEM)205

21 Scanning Transmission Electron Microscopy(STEM)206

22 Scanning Tunneling Microscopy and Scanning Force Microscopy(STM and SFM)207

23 Sheet Resistance and the Four Point Probe208

24 Spreading Resistance Analysis(SRA)217

25 Static Secondary Ion Mass Spectrometry(Static SIMS)225

26 Surface Roughness:Measurement Formation by Sputtering,Impact on Depth Profiling226

27 Total Reflection X-Ray Fluorescence Analysis(TXRF)227

28 Transmission Electron Microscopy(TEM)228

29 Variable-Angle Spectroscopic Ellipsometry(VASE)229

30 X-Ray Diffraction(XRD)230

31 X-Ray Fluorescence(XRF)231

32 X-Ray Photoelectron Spectroscopy(XPS)232

Index233

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