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PART Ⅰ Basic knowledge of semiconductor physics and semiconductor devices2

Chapter 1 Semiconductor2

1.1 Early history of semiconductors3

1.2 Properties and materials of semiconductor4

1.3 Band theory of solids6

1.4 Charge carrier（electrons and holes）7

1.4.1 The carrier concentration7

1.4.2 Carrier generation and recombination7

1.4.3 Drift and diffusion current8

1.5 Electrical conduction9

1.6 Doping of semiconductor10

1.7 Type of semiconductor10

1.7.1 N-type semiconductor10

1.7.2 P-type semiconductor11

1.8 Questions12

1.9 References12

Chapter 2 Semiconductor devices13

2.1 PN junction14

2.1.1 Basic structure of the PN junction14

2.1.2 Unbiased PN junction15

2.1.3 The current-voltage characteristic of PN junction16

2.1.4 The breakdown of PN junction16

2.1.5 Junction capacitance17

2.1.6 The applications of PN junction18

2.2 Schottky diode19

2.2.1 The structure of Schottky diode19

2.2.2 The principle of Schottky diode19

2.2.3 The characteristics of Schottky diode20

2.2.4 The applications of Schottky diode20

2.3 Heterojunction diode21

2.3.1 The concept of heterojunction21

2.3.2 The characteristics of heterojunction diode22

2.3.3 The application of heterojunction diode23

2.4 Bipolar junction transistor（BJT）24

2.4.1 The basic structure of BJT24

2.4.2 The current transfer characteristic of transistor25

2.4.3 Basic configurations and modes of operation26

2.4.4 The application of transistor27

2.5 The MOS transistor28

2.5.1 The basic structure of MOS transistor28

2.5.2 The form of inversion layer of MOSFET29

2.5.3 The basic operation and DC characteristic of MOSFET29

2.5.4 The types of MOSFET31

2.5.5 The terminal capacitances of MOSFET32

2.5.6 The advantage and application of MOSFET33

2.6 Questions34

2.7 References35

PART Ⅱ Manufacturing technologies and processes38

Chapter 3 Doping technology and hot processing38

3.1 Doping39

3.1.1 Diffusion40

3.1.2 Ion implantation41

3.1.3 Idealized ion implantation systems42

3.1.4 Channeling effects44

3.1.5 Shadowing effects45

3.1.6 Ion implantation damage46

3.2 Thermal oxidation47

3.3 Rapid thermal processing（RTP）50

3.3.1 RTP configuration and chamber design52

3.3.2 Rapid thermal activation of impurities54

3.3.3 Rapid thermal processing of dielectrics55

3.4 Questions57

3.5 References57

Chapter 4 Pattern transfer58

4.1 Photolithography60

4.2 Photoresist（PR）61

4.2.1 Composition of PR61

4.2.2 The types of PR61

4.2.3 The contrast curve of PR61

4.3 The pre-exposure process62

4.3.1 Priming63

4.3.2 Photoresist coating63

4.3.3 Soft bake65

4.4 Alignment and exposure66

4.4.1 Printer66

4.4.2 Photomask fabrication67

4.4.3 Alignment69

4.4.4 Exposure71

4.5 Postexposure72

4.5.1 Postexposure bake72

4.5.2 Development73

4.5.3 Hard bake75

4.5.4 Pattern inspection76

4.6 Nonoptical lithographic techniques77

4.6.1 X-ray lithography（XRL）77

4.6.2 Projection X-ray lithography78

4.6.3 Electron beam lithography（EBL）79

4.6.4 Projection electron beam lithography（SCALPEL）80

4.6.5 Ion beam lithography81

4.6.6 EBL and XRL resist82

4.7 Etch82

4.7.1 Introduction82

4.7.2 The characteristic of etch83

4.7.3 Wet etch process85

4.7.4 Chemical mechanical polishing（CMP）86

4.7.5 Dry etching87

4.8 High density plasma（HDP）etching92

4.9 Liftoff92

4.10 Questions93

4.11 References94

Chapter 5 Thin film95

5.1 The introduction of thin film96

5.1.1 Metallic thin films98

5.1.2 Polysilicon99

5.1.3 Oxide and nitride thin films99

5.2 Physical vapor deposition100

5.2.1 Evaporation101

5.2.2 Sputter103

5.3 Chemical vapor deposition104

5.3.1 Chemical vapor deposition process description104

5.3.2 Classification of CVD reactors104

5.3.3 Atmospheric pressure CVD106

5.3.4 Low pressure CVD in hot wall systems107

5.3.5 Plasma-enhanced CVD107

5.3.6 Step coverage108

5.4 Epitaxial growth110

5.4.1 Homoepitaxy111

5.4.2 Vapor phase epitaxy111

5.4.3 VPE hardware112

5.4.4 Epitaxy process114

5.4.5 Selective epitaxial growth115

5.4.6 Heteroepitaxy116

5.4.7 MBE117

5.4.8 MOCVD118

5.5 Questions119

5.6 References120

Chapter 6 Process Integration121

6.1 CMOS122

6.1.1 Introduction122

6.1.2 The formation of the CMOS process123

6.2 Microelectromechanical system（MEMS）126

6.2.1 Introduction126

6.2.2 The types and advantages of MEMS128

6.2.3 The processes of MEMS129

6.3 Nanoelectromechanical system（NEMS）136

6.4 Questions136

6.5 References137

PART Ⅲ Frontiers of science and technology140

Chapter 7 More than Moore：creating high value micro/nanoelectronics systems140

7.1 Introduction140

7.2 Preconditions for an industry-wide technical roadmap146

7.3 Lessons learned from“More Moore”147

7.3.1 Metallic nanowires147

7.3.2 Combining focus and variety148

7.4 Proposed methodology for“More-than-Moore”148

7.5 Applying the proposed methodology150

7.5.1 Form societal needs to markets150

7.5.2 MtM devices152

7.6 Summary157

7.7 References157

PART Ⅳ Development of professional English ability160

Chapter 8 How to write a scientific paper160

8.1 What is a scientific paper？161

8.1.1 The structure of a paper161

8.1.2 Steps for writing a paper161

8.2 Searching information in databases163

8.2.1 Web of Science163

8.2.2 Google Scholar170

8.3 How to prepare the Title172

8.4 How to prepare the abstract173

8.5 How to write the Introduction175

8.6 How to write the Materials and Methods section178

8.7 How to write the Results181

8.8 How to write the Discussion182

8.9 How to state the Acknowledgment183

8.10 How to cite the Reference185

8.11 Questions191

8.12 References191

Chapter 9 How to make a successful presentation192

9.1 Attention curve192

9.2 How to make a great PowerPoint presentation194

9.2.1 Create your narrative194

9.2.2 Utilize the format197

9.3 How to prepare an oral presentation206

9.3.1 Before your presentation206

9.3.2 During your presentation207

9.3.3 Warnings for oral presentation209

9.4 Questions209

9.5 References210