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SEMICONDUCTOR OPTOELECTRONIC DEVICES:INTRODUCTION TO PHYSICS AND SIMULATION【2025|PDF|Epub|mobi|kindle电子书版本百度云盘下载】

JOACHIM PIPREK 著
出版社： ACADEMIC PRESS
ISBN：
出版时间：2003
标注页数：140页
文件大小：15MB
文件页数：141页
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图书目录

Ⅰ Fundamentals1

1 Introduction to Semiconductors3

1.1 Electrons, Holes, Photons, and Phonons3

1.2 Fermi distribution and density of states5

1.3 Doping7

2 Electron energy bands13

2.1 Fundamentals13

2.1.1 Electron Waves13

2.1.2 Effective Mass of Electrons and Holes16

2.1.3 Energy Band Gap20

2.2 Electronic Band Structure: The k.p Method23

2.2.1 Two-Band Model （Zinc Blende）24

2.2.2 Strain Effects （Zinc Blende）27

2.2.3 Three- and Four-Band Models （Zinc Blende）30

2.2.4 Three-Band Model for Wurtzite Crystals32

2.3 Quantum Wells39

2.4 Semiconductor Alloys43

2.5 Band Offset at Heterointerfaces43

3 Carrier transport49

3.1 Drift and Diffusion49

3.2 pn-Junctions50

3.3 Heterojunctions51

3.4 Tunneling54

3.5 Boundary Conditions56

3.5.1 Insulator-Semiconductor Interface57

3.5.2 Metal-Semiconductor Contact58

3.6 Carrier Mobility61

3.7 Electron-Hole Recombinalion67

3.7.1 Radiative Recombination67

3.7.2 Nonradiative Recombination68

3.8 Electron-Hole Generation71

3.8.1 Photon Absorption71

3.8.2 Impact Ionization72

3.8.3 Band-to-Band Tunneling76

3.9 Advanced Transport Models78

3.9.1 Energy Balance Model78

3.9.2 Boltzmann Transport Equation81

4 Optical Waves83

4.1 Maxwell’s Equations83

4.2 Dielectric Function85

4.2.1 Absorption Coefficient87

4.2.2 Index of Refraction91

4.3 Boundary Conditions94

4.4 Plane Waves95

4.5 Plane Waves at Interfaces97

4.6 Multilayer Structures101

4.7 HelmholtzWave Equations102

4.8 Symmetric Planar Wayeguides104

4.9 Rectangular Waveguides108

4.10 Facet Reflection of Waveguide Modes110

4.11 Periodic Structures112

4.12 Gaussian Beams114

4.13 Far Field116

5 Photon Generation121

5.1 Optical Gain121

5.1.1 Transition Matrix Element124

5.1.2 Transition Energy Broadening127

5.1.3 Strain Effects131

5.1.4 Many-Body Effects135

5.1.5 Gain Suppression135

5.2 Spontaneous Emission136

6 Heat Generation and Dissipation141

6.1 Heat Flux Equation141

6.2 Heat Generation145

6.2.1 Joule Heat145

6.2.2 Recombination Heat145

6.2.3 Thomson Heat146

6.2.4 Optical Absorption Heat146

6.3 Thermal Resistance147

6.4 Boundary Conditions147

Ⅱ Devices149

7 Edge-Emitting Laser151

7.1 Introduction151

7.2 Models and Material Parameters156

7.2.1 Drift—Diffusion Model157

7.2.2 Gain Model158

7.2.3 Optical Model158

7.3 Cavity Length Effects on Loss Parameters161

7.4 Slope Efficiency Limitations162

7.5 Temperature Effects on Laser performance164

8 Vertical-Cavity Laser171

8.1 Introduction171

8.2 Long-Wavelength Vertical-Cavity Lasers171

8.3 Model and Parameters174

8.4 Canrier Transport Effects175

8.5 Thermal Analysis178

8.6 Oplical Simulation181

8.7 Temperature Effects on the Optical Gain184

9 Nitride Light Emitters187

9.1 Introduction187

9.2 Nitride Material Properties188

9.2.1 Carrier Transport188

9.2.2 Energy Bands191

9.2.3 Polarization192

9.2.4 Refractive Index194

9.2.5 Thermal Conductivity195

9.3 InGaN/GaN Light-Emitting Diode196

9.3.1 Device Structure196

9.3.2 Polarization Effects197